1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c32a i dm t c = 25 c, pulse width limited by t jm 120 a i ar t c = 25 c32a e as t c = 25 c 1.5 j e ar t c = 25 c45mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c weight 6 g hiperfet tm power mosfet n-channel enhancement mode high dv/dt, low t rr , hdmos tm family plus 247 features ? low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control advantages easy assembly space savings high power density g = gate d = drain s = source 98719a (7/00) ixfx 32n50 v dss = 500 v i d25 = 32 a r ds(on) = 0.15 t rr 250 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 500 v v dss temperature coefficient 0.102 %/k v gs(th) v ds = v gs , i d = 4 ma 2 4 v v gs(th) temperature coefficient -0.206 %/k i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c 200 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 15a 0.15 pulse test, t 300 s, duty cycle d 2 % preliminary data sheet ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved ixfx 32n50 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 18 28 s c iss 4950 5450 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 620 730 pf c rss 240 310 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 42 ns t d(off) r g = 2 (external) 110 ns t f 26 ns q g(on) 227 300 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 29 40 nc q gd 110 145 nc r thjc 0.35 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive; 128 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 0.85 c i rm 8a i f = i s -di/dt = 100 a/ s, v r = 100 v plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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